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Cassiana Magalhães, N. M. Eidt, Lindamar Fátima Teixeira de Carvalho, Zilda Rossi Araujo, S. T. Pereira, J. Moreira, Â. Souza, Andréa Moreno Pitelli et al.

R. Scholz, Armin Nurkanović, Amer Mešanović, Jürgen Gutekunst, A. Potschka, H. Bock, E. Kostina

Amer Mešanović, Ulrich Münz, A. Szabo, M. Mangold, J. Bamberger, M. Metzger, C. Heyde, R. Krebs et al.

H. Šiljak, Kenzie B. Givens, Pablo M. Flores, Christina Boyce-Jacino, Kyle Furlong, Mackenzie M. Johnson, Levi Fussell, Kirtus G. Leyba et al.

N. Tadić, Alija Dervić, Milena Erceg, B. Goll, H. Zimmermann

A voltage-controlled current amplifier/attenuator in a standard 0.35-<inline-formula> <tex-math notation="LaTeX">${\mu }\text{m}$ </tex-math></inline-formula> CMOS technology is presented. It is based on the resistive mirror method, using non-saturated MOSFETs. An open-loop design with no compensation capacitors provides a high stability and a small occupied chip area of 0.0126 mm<sup>2</sup>. A current gain dynamic range of 513 (54.2 dB), a gain-bandwidth product of 1.78 GHz at the largest current gain of 35.9 dB, and a maximum power consumption of 250 <inline-formula> <tex-math notation="LaTeX">${\mu }\text{W}$ </tex-math></inline-formula> with a single supply voltage of 1.3 V are achieved. In addition, an AC current source has been designed, integrated on the same chip, and used as the input of the proposed voltage-controlled amplifier/attenuator.

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