[This corrects the article DOI: 10.1021/acsomega.3c08932.].

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

Mass spectrometry is a crucial technology in numerous applications, but it places stringent requirements on the detector to achieve high resolution across a broad spectrum of ion masses. Low-dimensional nanostructures offer opportunities to tailor properties and achieve performance not reachable in bulk materials. Here, an array of sharp zinc oxide wires was directly grown on a 30 nm thin, free-standing silicon nitride nanomembrane to enhance its field emission (FE). The nanomembrane was subsequently used as a matrix-assisted laser desorption/ionization time-of-flight mass spectrometry detector. When ionized biomolecules impinge on the backside of the surface-modified nanomembrane, the current—emitted from the wires on the membrane’s front side—is amplified by the supplied thermal energy, which allows for the detection of the ions. An extensive simulation framework was developed based on a combination of lateral heat diffusion in the nanomembrane, heat diffusion along the wires, and FE, including Schottky barrier lowering, to investigate the impact of wire length and diameter on the FE. Our theoretical model suggests a significant improvement in the overall FE response of the nanomembrane by growing wires on top. Specifically, long thin wires are ideal to enhance the magnitude of the FE signal and to shorten its duration for the fastest response simultaneously, which could facilitate the future application of detectors in mass spectrometry with properties improved by low-dimensional nanostructures.

Transport properties of doped conjugated polymers (CPs) have been widely analyzed with the Gaussian disorder model (GDM) in conjunction with hopping transport between localized states. These models reveal that even in highly doped CPs, a majority of carriers are still localized because dielectric permittivity of CPs is well below that of inorganic materials, making Coulomb interactions between carriers and dopant counterions much more pronounced. However, previous studies within the GDM did not consider the role of screening the dielectric interactions by carriers. Here we implement carrier screening in the Debye-Hückel formalism in our calculations of dopant-induced energetic disorder, which modifies the Gaussian density of states (DOS). Then we solve the Pauli master equation using Miller-Abrahams hopping rates with states from the resulting screened DOS to obtain conductivity and Seebeck coefficient across a broad range of carrier concentrations and compare them to measurements. Our results show that screening has significant impact on the shape of the DOS and consequently on carrier transport, particularly at high doping. We prove that the slope of Seebeck coefficient versus electric conductivity, which was previously thought to be universal, is impacted by screening and decreases for systems with small dopant-carrier separation, explaining our measurements. We also show that thermoelectric power factor is underestimated by a factor of ∼10 at higher doping concentrations if screening is neglected. We conclude that carrier screening plays a crucial role in curtailing dopant-induced energetic disorder, particularly at high carrier concentrations.

2D materials have attracted broad attention from researchers for their unique electronic properties, which may be been further enhanced by combining 2D layers into vertically stacked van der Waals heterostructures (vdWHs). Among the superlative properties of 2D systems, thermoelectric (TE) energy conversion promises to enable targeted energy conversion, localized thermal management, and thermal sensing. However, TE conversion efficiency remains limited by the inherent tradeoff between conductivity and thermopower. In this paper, we use first-principles calculation to study graphene-based vdWHs composed of graphene layers and hexagonal boron nitride (h-BN). We compute the electronic band structures of heterostructured systems using Quantum Espresso and their TE properties using BoltzTrap2. Our results have shown that stacking layers of these 2D materials opens a bandgap, increasing it with the number of h-BN interlayers, which significantly improves the power factor (PF). We predict a PF of ∼1.0 × 1011 W K−2 m s for the vdWHs, nearly double compared to 5 × 1010 W K−2 m s that we obtained for single-layer graphene. This study gives important information on the effect of stacking layers of 2D materials and points toward new avenues to optimize the TE properties of vdWHs.