Tuning Thermal Boundary Conductance of 2D-Substrate Interfaces by Electrostatic Forces

Despite their potential for miniaturization, electronic devices made of 2D materials face thermal management challenges due to their reduced dimensionality, which can limit their efficiency and lifespan. Low thermal boundary conductance (TBC) is one major limiting factor in realizing efficient heat transfer to the substrate. Due to the roughness at the interface, the adhesion of 2D materials to their substrates tend to be weak, resulting in low TBC. Therefore, to improve heat flow from the 2D material, we need to discover novel ways of increasing TBC. In this study, we have used a numerical model combined with first-principles DFPT simulations to investigate a possible method to increase TBC using an electrostatic field due to gate voltage. Our study shows that electrostatic pressure can be used to effectively enhance TBC for an interface formed by a 2D material and a rough substrate. We find that electrostatic pressure can improve TBC by more than 300 % when an electric field of 3 V/nm is applied. This is due to an improvement in the vdW spring coupling constant, which shows a more than two-fold increase when a substrate roughness of 1.6 nm and correlation length of 10.8 nm, 2D-material's bending stiffness of 1.5 eV, and adhesion energy of 0.1 $J/m^{2}$ were used. We show that TBC is enhanced more when the substrate has a large roughness and small correlation length, and the $2D$ material has a large bending stiffness. This is because a stiff 2D sheet resist bending when voltage/pressure is applied, thus causing it to press more on the roughness peaks, resulting in a tremendous increase in the coupling constants at the peaks in the atomically rough surface of the substrate. However, a flexible 2D material can easily bend to conform to the topography of the rough substrate when voltage/pressure is applied, which makes the coupling constants across the interface more uniform. Here we show that TBC is enhanced more when adhesion is weak because a weak vdW bond is easily compressed by external pressure. Therefore, our study provides valuable information that can be applied in designing electronic devices with efficient heat management by using gate voltage, substrate roughness combined with the mechanical properties.