Abstract In this invited review article, we give a comprehensive account of the existing literature on the electronic properties of organic materials. The main focus of this article is the rich and extensive literature on the electronic transport in organic materials, particularly conjugated polymers, as they offer numerous advantages over inorganic materials. Consequently, they have found widespread application in photovoltaics, light-emitting displays, and even, more recently, in thermoelectric energy conversion. This literature review will be useful to researchers starting in the field of organic electronics as well as experts seeking to broaden their understanding of transport in polymers.

Isotopically purified semiconductors potentially dissipate heat better than their natural, isotopically mixed counterparts as they have higher thermal conductivity (κ). But the benefit is low for Si at room temperature, amounting to only ∼10% higher κ for bulk ^{28}Si than for bulk natural Si (^{nat}Si). We show that in stark contrast to this bulk behavior, ^{28}Si (99.92% enriched) nanowires have up to 150% higher κ than ^{nat}Si nanowires with similar diameters and surface morphology. Using a first-principles phonon dispersion model, this giant isotope effect is attributed to a mutual enhancement of isotope scattering and surface scattering of phonons in ^{nat}Si nanowires, correlated via transmission of phonons to the native amorphous SiO_{2} shell. The Letter discovers the strongest isotope effect of κ at room temperature among all materials reported to date and inspires potential applications of isotopically enriched semiconductors in microelectronics.

Conjugated polymers need to be doped to increase charge carrier density and reach the electrical conductivity necessary for electronic and energy applications. While doping increases carrier density, Coulomb interactions between the dopant molecules and the localized carriers are poorly screened, causing broadening and a heavy tail in the electronic density‐of‐states (DOS). The authors examine the effects of dopant‐induced disorder on two complimentary charge transport properties of semiconducting polymers, the Seebeck coefficient and electrical conductivity, and demonstrate a way to mitigate them. Their simulations, based on a modified Gaussian disorder model with Miller‐Abrahams hopping rates, show that dopant‐induced broadening of the DOS negatively impacts the Seebeck coefficient versus electrical conductivity trade‐off curve. Increasing the dielectric permittivity of the polymer mitigates dopant‐carrier Coulomb interactions and improves charge transport, evidenced by simultaneous increases in conductivity and the Seebeck coefficient. They verified this increase experimentally in iodine‐doped P3HT and P3HT blended with barium titanate (BaTiO3) nanoparticles. The addition of 2% w/w BaTiO3 nanoparticles increased conductivity and Seebeck across a broad range of doping, resulting in a fourfold increase in power factor. Thus, these results show a promising path forward to reduce the dopant‐charge carrier Coulomb interactions and mitigate their adverse impact on charge transport.

Two-dimensional (2D) materials have emerged as a platform for a broad array of future nanoelectronic devices. Here we use first-principles calculations and phonon interface transport modeling to calculate the temperature-dependent thermal boundary conductance (TBC) in single layers of beyond-graphene 2D materials silicene, hBN, boron arsenide (BAs), and blue and black phosphorene (BP) on amorphous SiO2 and crystalline GaN substrates. Our results show that for 2D/3D systems, the room temperature TBC can span a wide range from 7 to 70 MW m−2 K−1 with the lowest being for BP and highest for hBN. We also show that 2D/3D TBC has a strong temperature dependence that can be alleviated by encapsulating the 2D/3D stack. Upon encapsulation with AlO x , the TBC of several beyond-graphene 2D materials can match or exceed reported values for graphene and numerous transition-metal dichalcogendies which are in the range of 15–40 MW m−2 K−1. We also compute the room temperature TBC as a function of van der Waals spring coupling (K a ) where the TBC falls in the range of 50–150 MW m−2 K−1 at coupling strengths of K a = 2–4 N m−1 for silicene, BAs, and blue phosphorene. We further identify group III–V materials with ultra-soft flexural branches as being promising 2D materials for thermal isolation and energy scavenging applications when matched with crystalline substrates.

Owing to its superlative carrier mobility and atomic thinness, graphene exhibits great promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor deposition (CVD), the most popular method for wafer-scale growth of graphene, produces monolayers that are polycrystalline, where misoriented grains are separated by extended grain boundaries (GBs). Theoretical models of GB resistivity focused on small sections of an extended GB, assuming it to be a straight line, and predicted a strong dependence of resistivity on misorientation angle. In contrast, measurements produced values in a much narrower range and without a pronounced angle dependence. Here we study electron transport across rough GBs, which are composed of short straight segments connected together into an extended GB. We found that, due to the zig-zag nature of rough GBs, there always exist a few segments that divide the crystallographic angle between two grains symmetrically and provide a highly conductive path for the current to flow across the GBs. The presence of highly conductive segments produces resistivity between 102 to 104 Ω μm regardless of misorientation angle. An extended GB with large roughness and small correlation length has small resistivity on the order of 103 Ω μm, even for highly mismatched asymmetric GBs. The effective slope of the GB, given by the ratio of roughness and lateral correlation length, is an effective universal quantifier for GB resistivity. Our results demonstrate that the probability of finding conductive segments diminishes in short GBs, which could cause a large variation in the resistivity of narrow ribbons etched from polycrystalline graphene. We also uncover spreading resistance due to the current bending in the grains to flow through the conductive segments of the GB and show that it scales linearly with the grain resistance. Our results will be crucial for designing graphene-based interconnects for future integrated circuits.

Recent research on twisted bilayer graphene (TBG) uncovered that its twist-angle-dependent electronic structure leads to a host of unique properties, such as superconductivity, correlated insulating states, and magnetism. The flat bands that emerge at low twist angles in TBG result in sharp features in the electronic density of states, affecting transport. Here we show that they lead to superior and tuneable thermoelectric (TE) performance. Combining an iterative Boltzmann transport equation solver and electronic structure from an exact continuum model, we calculate TE transport properties of TBG at different twist angles, carrier densities, and temperatures. Our simulations show the room-temperature TE power factor (PF) in TBG reaches 40 mW m−1 K−2, significantly higher than single-layer graphene and among the highest reported to date. The peak PF is observed near the magic angle, at a twist angle of ≈1.3∘, and near complete band filling. We elucidate that its dependence is driven by two opposing forces: the band gap between the flat and remote bands suppresses bipolar transport and improves the Seebeck coefficient but the gap decreases with twist angle; on the other hand, the Fermi velocity, which impacts conductivity, is smallest at the magic angle and rises with twist angle. We observed a further increase in the PF of TBG with decreasing temperature. The strong TE performance, along with the ability to fine-tune transport using twist angle, makes TBG an interesting candidate for future research and applications in energy conversion and thermal sensing and management.

Two-dimensional 1H transition metal dichalcogenides (TMDs) provide a platform, analogous to group IV cubic semiconductor alloys (${\mathrm{Si}}_{1\ensuremath{-}x}\mathrm{Ge}$), that enables systematic investigations on the effects of alloying in 2D material systems. The existing literature on TMD alloys explores their electrical, magnetic, and optical properties, but lacks a comprehensive analysis of thermal transport in supported and nanostructured systems. Here we employ first-principles-driven phonon Boltzmann transport formalism and a 2D-3D thermal boundary conductance model to systematically study in-plane and cross-plane phonon transport of suspended and ${\mathrm{SiO}}_{2}$ supported single-layer TMD alloys. We find that the thermal conductivity of alloyed TMDs is dependent on system size up to tens of microns and that the combination of mass-difference and substrate scattering can significantly reduce thermal transport even in large systems ($g500$ nm). Beyond in-plane transport, we find that the thermal boundary conductance displays a qualitatively different trend and significantly weaker modulation with alloy composition as compared to the thermal conductivity. Our results help shed light on the in-plane and cross-plane thermal transport properties of 2D single-layer TMD alloys and further their applications in nanoelectronics, sensing, and energy devices.

Abstract Heat dissipation in nanoelectronics has become a major bottleneck to further scaling in next-generation integrated circuits. In order to address this problem and develop more energy-efficient nanoelectronic transistor, sensor, and storage devices, we must understand thermal processes at the atomic scale, which requires numerical simulation of the interaction between electrons and heat, carried by quantized lattice vibrations called phonons. Here we examine in detail the phonon emission and absorption spectra in silicon at several elevated values for the electron temperature. The effect of electric field on the electron distribution and equivalent electron temperature is obtained from full-band Monte Carlo simulation for bulk silicon. The electron distributions are used to numerically compute the phonon emission and absorption spectra and discover trends in their behavior at high electron temperatures. The concept of electron temperature is used to understand the relationship between field and heat emission, and it is found that longitudinal acoustic (LA) phonon emission increases at high electron temperatures. It is also found that emission of slower zone-edge phonons increases for all phonon branches at high electron temperatures. These conclusions at high electric fields can be used to enable heat-conscious design of future silicon devices.

Few-layer (FL) transition metal dichalcogenides have drawn attention for nanoelectronics applications due to their improved mobility, owing to the partial screening of charged impurities at the oxide interface. However, under realistic operating conditions, dissipation leads to self-heating, which is detrimental to electronic and thermal properties. We fabricated a series of FL-WSe2 devices and measured their I-V characteristics, while their temperatures were quantified by Raman thermometry and simulated from first principles. Our tightly-integrated electro-thermal study shows that Joule heating leads to a significant layer-dependent temperature rise, which affects mobility and alters the flow of current through the stack. This causes the temperatures in the top layers to increase dramatically, degrading their mobility and causing the current to reroute to the bottom of the FL stack where thermal conductance is higher. We discover that this current rerouting phenomenon improves heat removal because the current flows through layers closer to the substrate, limiting the severity of self-heating and its impact on carrier mobility. We also observe significant lateral heat removal via the contacts because of longer thermal healing length in the top layers and explore the optimum number of layers to maximize mobility in FL devices. Our study will impact future device designs and lead to further improvements in thermal management in vdW-based devices.