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P. Rouf, N. O’Brien, S. Buttera, Ivana Martinović, B. Bakhit, Erik Martinsson, J. Palisaitis, Chih-Wei Hsu, H. Pedersen
9 23. 4. 2020.

Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

Low temperature deposition of high-quality epitaxial GaN is crucial for its integration inelectronic applications. Chemical vapor deposition at approximately 800 °C using SiC with anAlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,we present a low temperature atomic layer deposition (ALD) process usingtris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limitingbehaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced werecrystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio withlow carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grewepitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-basedelectronic devices.


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