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5. 12. 2001.
Characterization of interface traps in subthreshold regions of implanted 6H- and 4H-SiC MOSFETs
In this paper the interface trap densities (D/sub it/) of 6H- and 4H-SiC MOSFETs in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy (E/sub T/) from the transfer characteristics. We show these interface trap densities increase exponentially approaching the onset of strong inversion for both polytypes, and D/sub it/(E/sub T/) is higher in 4H than in 6H through the subthreshold region. These results are consistent with previous reports.