A Compact SPICE Model for Current Transients within the Subthreshold Regime of Memristors
In memristors and resistance switching devices, there is a region prior to switching which exhibits current transients with potentially useful dynamics. We refer to this region as the subthreshold region owing to it occurring prior to any switching threshold. These transients exhibit a characteristic peaked response with a fast rise in current followed by a slower decay. This behaviour has previously been used to quantify the mobilities of defects drifting within the active layer of the devices, but it has also been used in neuromorphic circuits to carry out edge detection, to implement homeostasis within artificial synapses and could have uses in replicating eligibility traces. We present an empirical SPICE model to reproduce these transients within circuit simulators. The model is compared with experimental datasets for a range of applied voltages and we present experimentally verified parameters for readers to use within their own simulations.